FLL200IB-3 fet equivalent, (fll200ib-1/-2/-3) l-band medium & high power gaas fet.
*
*
*
*
* High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability .
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXI.
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments f.
Image gallery
TAGS
Manufacturer
Download (183.22KB)